Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W44.07€/ gab.Cena ieskaitot PVN 21%
|
Manufacturer: | GeneSiC SEMICONDUCTOR |
Drain-source voltage: | 1.2kV |
Drain current: | 90A |
On-state resistance: | 20mΩ |
Type of transistor: | N-MOSFET |
Power dissipation: | 542W |
Polarisation: | unipolar |
Kind of package: | tube |
Features of semiconductor devices: | Kelvin terminal |
Gate charge: | 219nC |
Technology: | G3R™ |
Technology: | SiC |
Kind of channel: | enhanced |
Gate-source voltage: | -5...15V |
Pulsed drain current: | 240A |
Mounting: | THT |
Case: | TO247-4 |
Vienības svars: | 0.006 kg |
---|---|
Minimālais pasūtījums: | 1 |