Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-78.21€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | GeneSiC SEMICONDUCTOR |
Kind of package: | tube |
Drain-source voltage: | 1.7kV |
Drain current: | 4A |
On-state resistance: | 1Ω |
Type of transistor: | N-MOSFET |
Power dissipation: | 54W |
Polarisation: | unipolar |
Features of semiconductor devices: | Kelvin terminal |
Technology: | G2R™ |
Technology: | SiC |
Kind of channel: | enhanced |
Gate-source voltage: | -5...20V |
Pulsed drain current: | 8A |
Mounting: | SMD |
Case: | TO263-7 |
Vienības svars: | 0.001 kg |
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Minimālais pasūtījums: | 1 |