Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W7.03€/ gab.Cena ieskaitot PVN 21%
|
Manufacturer: | MICROCHIP (MICROSEMI) |
Drain-source voltage: | 1.7kV |
Drain current: | 5A |
On-state resistance: | 940mΩ |
Type of transistor: | N-MOSFET |
Power dissipation: | 68W |
Polarisation: | unipolar |
Gate charge: | 18nC |
Technology: | SiC |
Kind of channel: | enhanced |
Pulsed drain current: | 12A |
Mounting: | THT |
Case: | TO247-3 |
Vienības svars: | 0.006 kg |
---|---|
Minimālais pasūtījums: | 1 |
Ir pieejams: 12 855.26 € -+ |