Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W8.99€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | GeneSiC SEMICONDUCTOR |
Technology: | G3R™ |
Technology: | SiC |
Mounting: | THT |
Power dissipation: | 88W |
Case: | TO247-3 |
Kind of package: | tube |
Gate charge: | 18nC |
Kind of channel: | enhanced |
Gate-source voltage: | -5...15V |
Pulsed drain current: | 16A |
Drain-source voltage: | 1.7kV |
Drain current: | 6A |
On-state resistance: | 0.45Ω |
Type of transistor: | N-MOSFET |
Polarisation: | unipolar |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 10 56.90 € -+ | Ir pieejams: 2 137.94 € -+ |