Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 350mW; SOT230.06€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | DIODES INCORPORATED |
Type of transistor: | N-MOSFET |
Polarisation: | unipolar |
Drain-source voltage: | 60V |
Drain current: | 0.3A |
Pulsed drain current: | 0.8A |
Power dissipation: | 0.35W |
Case: | SOT23 |
Gate-source voltage: | ±20V |
On-state resistance: | 3Ω |
Mounting: | SMD |
Kind of package: | reel |
Kind of package: | tape |
Kind of channel: | enhanced |
Features of semiconductor devices: | ESD protected gate |
Vienības svars: | 0.001 kg |
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Minimālais pasūtījums: | 25 |