Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns9.14€/ gab.Cena ieskaitot PVN 21%
|
Manufacturer: | IXYS |
Mounting: | THT |
Case: | TO247-3 |
Kind of package: | tube |
Power dissipation: | 298W |
Polarisation: | unipolar |
Gate charge: | 185nC |
Technology: | TrenchP™ |
Kind of channel: | enhanced |
Gate-source voltage: | ±15V |
Reverse recovery time: | 53ns |
Drain-source voltage: | -65V |
Drain current: | -120A |
On-state resistance: | 10mΩ |
Type of transistor: | P-MOSFET |
Vienības svars: | 0.006 kg |
---|---|
Minimālais pasūtījums: | 1 |