Transistor: P-MOSFET; unipolar; -20V; -4.8A; 1.2W; TSOT260.85€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | DIODES INCORPORATED |
Power dissipation: | 1.2W |
Case: | TSOT26 |
Mounting: | SMD |
Kind of package: | reel |
Kind of package: | tape |
Features of semiconductor devices: | ESD protected gate |
Drain-source voltage: | -20V |
Drain current: | -4.8A |
On-state resistance: | 62mΩ |
Type of transistor: | P-MOSFET |
Polarisation: | unipolar |
Kind of channel: | enhanced |
Gate-source voltage: | ±12V |
Minimālais pasūtījums: | 1 |
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