Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-60.52€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | DIODES INCORPORATED |
Power dissipation: | 0.9W |
Mounting: | SMD |
Kind of package: | reel |
Kind of package: | tape |
Case: | U-DFN2030-6 |
Features of semiconductor devices: | ESD protected gate |
Drain-source voltage: | -20V |
Drain current: | -4.1A |
On-state resistance: | 75mΩ |
Type of transistor: | P-MOSFET x2 |
Polarisation: | unipolar |
Kind of channel: | enhanced |
Gate-source voltage: | ±10V |
Minimālais pasūtījums: | 3 |
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Ir pieejams: 10 1782.53 € -+ | Ir pieejams: 10 17.17 € -+ | Ir pieejams: 5 340.16 € -+ |