   | Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 12.5A; Idm: 23A14.47€/ gab.Cena ieskaitot PVN 21%
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Produkta apraksts
| Manufacturer: | INFINEON TECHNOLOGIES |
| Gate current: | 7.7mA |
| Drain-source voltage: | 600V |
| Drain current: | 12.5A |
| On-state resistance: | 0.19Ω |
| Type of transistor: | N-JFET |
| Power dissipation: | 55.5W |
| Polarisation: | unipolar |
| Kind of package: | tape |
| Gate charge: | 3.2nC |
| Technology: | CoolGaN™ |
| Kind of transistor: | HEMT |
| Kind of channel: | enhanced |
| Gate-source voltage: | -10V |
| Pulsed drain current: | 23A |
| Mounting: | SMD |
| Case: | PG-HSOF-8-3 |
Parametri
| Minimālais pasūtījums: | 1 |
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