Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W65.62€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | IXYS |
Mounting: | SMD |
Reverse recovery time: | 100ns |
Drain-source voltage: | 55V |
Drain current: | 550A |
On-state resistance: | 1.3mΩ |
Type of transistor: | N-MOSFET |
Power dissipation: | 830W |
Polarisation: | unipolar |
Gate charge: | 595nC |
Technology: | GigaMOS™ |
Technology: | TrenchT2™ |
Kind of channel: | enhanced |
Gate-source voltage: | ±20V |
Pulsed drain current: | 2kA |
Case: | SMPD |
Vienības svars: | 0.008 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 1 175.46 € -+ |