Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A1.35€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | SHINDENGEN |
Mounting: | SMD |
Drain-source voltage: | 600V |
Drain current: | 0.5A |
On-state resistance: | 10Ω |
Type of transistor: | N-MOSFET |
Power dissipation: | 35W |
Polarisation: | unipolar |
Kind of package: | reel |
Kind of package: | tape |
Gate charge: | 4.3nC |
Technology: | Hi-PotMOS2 |
Kind of channel: | enhanced |
Gate-source voltage: | ±30V |
Pulsed drain current: | 2A |
Case: | FB (TO252AA) |
Minimālais pasūtījums: | 1 |
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Ir pieejams: 10 1586.19 € -+ | Ir pieejams: 9 44.32 € -+ |