Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W27.83€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | BASiC SEMICONDUCTOR |
Case: | TO247-3 |
Mounting: | THT |
On-state resistance: | 80mΩ |
Kind of package: | tube |
Technology: | SiC |
Drain-source voltage: | 1.2kV |
Drain current: | 27A |
Type of transistor: | N-MOSFET |
Power dissipation: | 241W |
Polarisation: | unipolar |
Gate charge: | 149nC |
Kind of channel: | enhanced |
Gate-source voltage: | -5...20V |
Pulsed drain current: | 80A |
Vienības svars: | 0.006 kg |
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Minimālais pasūtījums: | 1 |
Ir pieejams: 3 9.20 € -+ |