Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W49.25€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | STMicroelectronics |
Technology: | SiC |
Technology: | SiCFET |
Case: | HIP247™ |
Mounting: | THT |
On-state resistance: | 70mΩ |
Kind of package: | tube |
Power dissipation: | 318W |
Pulsed drain current: | 130A |
Drain-source voltage: | 1.2kV |
Drain current: | 50A |
Type of transistor: | N-MOSFET |
Polarisation: | unipolar |
Gate charge: | 122nC |
Gate-source voltage: | -10...25V |
Vienības svars: | 0.004 kg |
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Minimālais pasūtījums: | 1 |