Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-310.31€/ gab.Cena ieskaitot PVN 21%
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Manufacturer: | MICROCHIP (MICROSEMI) |
Drain-source voltage: | 600V |
Drain current: | 19A |
On-state resistance: | 0.125Ω |
Type of transistor: | N-MOSFET |
Power dissipation: | 219W |
Polarisation: | unipolar |
Gate charge: | 88nC |
Technology: | CoolMOS™ |
Kind of channel: | enhanced |
Gate-source voltage: | ±20V |
Pulsed drain current: | 89A |
Mounting: | THT |
Case: | TO247-3 |
Vienības svars: | 0.005 kg |
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Minimālais pasūtījums: | 1 |